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產(chǎn)品概述/Product Introduction：

? 氣相外延是一種單晶薄層生長方法

Vapor phase epitaxy is a single crystal thin layer growth method

? 氣相外延廣義上是化學(xué)氣相沉積的一種特殊方式，其生長薄層的晶體結(jié)構(gòu)是單晶襯底的延續(xù)，而且與襯底的晶向保持對應(yīng)的關(guān)系

Vapor phase epitaxy is a special method of chemical vapor deposition in a broad sense, in which the crystal structure of the thin layer is a continuation of the single crystal substrate and keeps correspond-ing relationship with the crystal orientation of the substrate

? 在半導(dǎo)體科學(xué)技術(shù)的發(fā)展中，氣相外延發(fā)揮了重要作用

In the development of semiconductor science and technology, gas phase epitaxy has played an import-ant role

? 砷化鎵(GaAs) 氣相外延技術(shù)生長的砷化鎵(GaAs) 純度高、電學(xué)特性好，廣泛的應(yīng)用于霍爾器件、耿氏二極管、場效應(yīng)晶體管等微波器件中

Gallium arsenide (GaAs) grown by gas phase epitaxy technology has high purity and good electrical properties, and is widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices

產(chǎn)品特點(diǎn)/Product Characteristics：

? 本設(shè)備的生長室采用立式石英反應(yīng)生長室。整個(gè)設(shè)備包括以下各分系統(tǒng):反應(yīng)生長室系統(tǒng)、加熱系統(tǒng)、襯底支架傳動(dòng)系統(tǒng)、氣路系統(tǒng)、水冷卻系統(tǒng)、報(bào)警系統(tǒng)、氣體供給與純化系統(tǒng)、氣動(dòng)系統(tǒng)、控制系統(tǒng)

The growth chamber of this equipment adopts vertical quartz reaction growth chamber.The wholeequipment includes the following subsystems: reaction growth chamber system, heating system,substrate support transmission system, gas path system, water cooling system, alarm system, gassupply and purification system, pneumatic system and control system

? 旋轉(zhuǎn)速度**可達(dá)3000轉(zhuǎn)

The maximum rotation speed can reach 3000 revolutions

? 多坩堝轉(zhuǎn)換

Multi-crucible conversion.

應(yīng)用范圍/Scope：

? 廣泛的應(yīng)用于霍爾器件、耿氏二極管、場效應(yīng)晶體管等微波器件中

lt is widely used in Hall devices,Gunn diodes, field effect transistors and other microwave devices