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該系統(tǒng)對(duì)測(cè)量和評(píng)價(jià)薄膜電子和空穴的遷移率非常關(guān)鍵，主要是用于EL元件和太陽能電池。該系統(tǒng)由一個(gè)短脈沖激光激發(fā)的載流子產(chǎn)生氮模具，高速采樣電子，樣品室和數(shù)據(jù)處理系統(tǒng)。我們的防噪聲系統(tǒng)和獨(dú)特的信號(hào)處理降低了噪聲明顯，響應(yīng)速度快，如納米二階和高靈敏度已經(jīng)達(dá)到為了測(cè)量電子和空穴的遷移率。更換不同的模具（作為一個(gè)選項(xiàng)）模具的激光使系統(tǒng)振蕩的波長(zhǎng)范圍從分子與脈沖寬度縮短600皮秒熒光。除此之外，TOF法測(cè)量，可選單位系統(tǒng)能通過FET的方法測(cè)量的遷移率（選項(xiàng)）。

原理：

脈沖光照射樣品。然后用示波器測(cè)量電荷的流動(dòng)速度

光脈沖照射到薄膜樣品，被施加電壓到薄膜樣品。

主要應(yīng)用：

測(cè)試有機(jī)半導(dǎo)體和有機(jī)薄膜的載流子遷移率

The Model CMM-250 has been designed to measure the electron and hole mobilities which are very critical to evaluation of the thin film to be used for the EL elements and solar cells. The system consists of a short pulse nitrogen excitation die laser for carrier generation， high speed sampling electronics， sample compartment and data processing system. Our noise prevention system and unique signal processing have reduced noise significantly so that fast response such as nano-second order and high detection sensitivity have been achieved in order to measure the electron and hole mobilities. Changing different die ( as an option ) of the die laser enables the system to oscillate the wavelength range from 337nm to 730nm with pulse width shortened in 600 pico second. In addition to this TOF method measurement， the system with an optional unit is capable to measure mobilities by FET method(option).

Features

? Achievement of time resolution at nano-second enables the system to measure mobility such as 10-7-１0-１cm2/V·sec( this maybe changed depending on the sample and its thickness).

? Easy Operation with probe/sample compartment

? New designed optics and data processing enabled to obtain high SN ratio data

Measurement

Mobility calculation

While checking the measurement data， mobility can be easily calculated.

By putting cursor on the inflection point， mobility can be calculated automatically while seeing the logarithmic converted data.

Signal processing

In addition to noise prevention， our unique signal processing enables the system to calculate very small signal data with large noise. The measurement can be applied to the thinner film or high mobility sample， which extends the measurement range.

FET Measurement ( Option )

Adding the optional probe and software to the system is enabled to measure mobility measurement for FET type element.